Please use this identifier to cite or link to this item: https://repositorio.ufma.br/jspui/handle/123456789/872
Title: Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles
Authors: LANG, R.
MENEZES, A. S. de
SANTOS, A. O. dos
REBOH, S.
MENESES, E. A.
AMARAL, L.
CARDOSO, L.
Keywords: Strain
Synchrotron radiation
X-ray multiple diffraction
Ion-beam-induced epitaxial crystallization
Nanoparticles
Issue Date: 2013
Publisher: Wiley
Citation: LANG, R. et al. Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles. Journal of Applied Crystallography, v. 46, n. 6, p. 1796-18-04, 2013. DOI: 10.1107/S0021889813026046
Abstract: Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using [omega]:[varphi] mappings of the ({\overline 1}11) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.
URI: http://hdl.handle.net/123456789/872
ISSN: 0021-8898
Appears in Collections:Artigos - Engenharia de Alimentos



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